View TPCS8102_4626777.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TPCS8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8102
Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = -10 A (max.) (VDS = -20 V) Enhancement mode: Vth = -0.5~-1.2 V (VDS = -10 V, ID = -200 A) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
JEDEC
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -20 -20 12 -6 -24 1.5 0.6 46.8 -6 0.15 150 -55 to 150 Unit V V V A W W mJ A mJ C C
2-3R1B
JEITA TOSHIBA
Weight: 0.035 g (typ.)
Circuit Configuration
Drain power dissipation Drain power dissipation
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a, Note 4) Channel temperature Storage temperature range
Note: For Notes 1 to 5, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-16
TPCS8102
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit C/W C/W
Marking (Note 5)
Part No. (or abbreviation code)
S8102
Lot No. (weekly code)
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
Note 3: VDD = -16 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = -6.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on the lower right of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture ("01" for the first week of the year, continuing up to "52" or "53") Year of manufacture (the last digit of the calendar year)
2
2006-11-16
TPCS8102
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf ton 4.7 0V -5 V VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 10 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 12 V VDS = -10 V, ID = -200 A VGS = -2.0 V, ID = -3 A VGS = -2.5 V, ID = -3 A VGS = -4 V, ID = -3 A VDS = -10 V, ID = -3 A Min. -20 -8 -0.5 8.5 Typ. 30 23 16 17 2740 780 1030 7.6 Max. 10 -10 -1.2 60 38 20 S pF pF pF m Unit A A V V
ID = -3 A VOUT RL = 3.3
16
ns
110
VDD -10 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD -16 V, VGS = -5 V, ID = -6 A Duty < 1%, tw = 10 s = 230 37 27 10 nC nC nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = -6 A, VGS = 0 V Min. -- -- Typ. -- -- Max. -24 1.2 Unit A V
Forward voltage (diode)
3
2006-11-16
TPCS8102
4
2006-11-16
TPCS8102
5
2006-11-16
TPCS8102
rth - tw
500 300 (1) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (2) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (2)
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (C/W)
100 50 30
(1)
10 5 3
1 0.5 0.3 SINGLE PULSE 10 m 100 m 1 10 100 1000
0.1 1m
PULSE WIDTH
tw (s)
-100 ID max. (pulse)* -10 10 ms* 1 ms*
Drain current
ID
-1 -0.1
(A)
*: Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.1 -1 VDSS max -10 -100
-0.01 -0. 01
Drain-source voltage
VDS
(V)
6
2006-11-16
TPCS8102
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
7
2006-11-16

▲Up To Search▲

Price & Availability of TPCS8102

	To Download TPCS8102 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .